MTZ6V2 Silicon Epitaxial Planar Zener DiodesġSS404WS Silicon Epitaxial Schottky Barrier Diode MTZ20A Silicon Epitaxial Planar Zener Diodes MMFTN123 N-channel Logic Level Enhancement Mode Field Effect Transistor ST28S NPN Silicon Epitaxial Planar Transistor Some Part number from the same manufacture Semtech Corporation (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) VCE=6V, IC=150mA Collector Saturation Voltage IC=100mA, IB=10mA Base Saturation Voltage IC=100mA, IB=10mA Collector Cutoff Current at VEB=5V Gain Bandwidth Product VCE=10V, IC=1mA Output Capacitance VCB=10V, f=1MHz Noise Figure f=1KHz, RG=10K Unit V ♚ MHz pF dB Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value to +150 Unit mA mW 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb 25 OC Parameter DC Current Gain VCE=6V, IC=2mA Current Gain Group Symbol hFE VCE(sat) VBE(sat) ICBO IEBO fT COB NF Min. On special request, these transistors can be manufactured in different pin configurations. As complementary type the PNP transistor 2SA1015 is recommended. The transistor is subdivided into four groups, Y, G and L, according to its DC current gain. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
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